Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Abstract

An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K_α and synchrotron-generated photons show that the oxide-metal interface is formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni₃Al(111) surfaces. The results of a photoelectric work function measurement are also discussed. Copyright © 2010 John Wiley & Sons, Ltd.